Description

Ultra-low leakage surface mount diode.

Feature(s)

Ultra Low Leakage Current (5nA @ V_R = 75V)
Small Surface Mount Package (1.6x0.8x0.6mm)

Application(s)

Mobile Phones
Portable and Consumer Electronics

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Standard
AEC Qualified	No
Configuration	Anode, Cathode
Polarity	Anode, Cathode
Power Rating(mW)	280 mW
ESD Diodes (Y\|N)	No
Peak RepetitiveReverse VoltageV_RRM(V)	85 V
Reverse RecoveryTime trr (ns)	3000 ns
Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100Ω	3000
V(BR)R (V) Min @IR=100μA	85
Maximum Average Rectifier Current I_{O (mA)}	100 mA
Maximum Peak Forward Surge Current I_{FSM (A)}	4 A
Forward Voltage Drop V_F @ I_{F (mA)}	0.9, 1 mA
Maximum ReverseCurrent I_R(µA)	0.005 µA
TotalCapacitance C_T(pF)	1.2 pF
VF(V) Max @ IF=100mA	1
Maximum Reverse Current I_R @ V_{R (V)}	75 V
IR(uA) Max @ VR=80V	5nA@75V
CT(pF) Max @ VR = 0V, f = 1MHz	2

Technical Documents

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2770	2025-10-30	2025-10-30	Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products
PCN-2544	2021-10-05	2022-01-05	Phenitec Wafer Manufacturing Site Change and Additional Wafer Source on Select Products
PCN-2461	2020-05-08	2021-04-05	Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site

BAV116T