Diodes Incorporated
SOD123F

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BAV116HWF

SURFACE MOUNT LOW LEAKAGE DIODE

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Description

The BAV116HWF is an 85V, 5nA and 3μs switching diode that is optimized for ultra-low leakage current.

Feature(s)

  • Ultra Low Leakage Current (5nA @ VR = 75V)
  • Flat Leadframe Design for Improved Thermal Transfer
  • Low Capacitance

Application(s)

  • Mobile
  • Portable Electronics
  • Consumer Electronics
  • Motor Control
  • Power Supplies

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive supports PPAP) Standard
Configuration Single
Polarity Anode, Cathode
Power Rating (mW) 375 mW
ESD Diodes (Y|N) No
Peak RepetitiveReverse VoltageVRRM (V) 85 V
Reverse RecoveryTime trr (ns) 3000 ns
Maximum Average Rectifier Current IO (mA) 215 mA
Maximum Peak Forward Surge Current IFSM (A) 4 A
Forward Voltage Drop VF @ IF (mA) 1, 10 mA
Maximum ReverseCurrent IR (µA) 0.005 µA
TotalCapacitance CT (pF) 2 pF
VF(V) Max @ IF=100mA 1
V(BR)R (V) Min @IR=100?A 85
Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100? 3000
Maximum Reverse Current IR @ VR (V) 75 V
IR(uA) Max @ VR=80V 5nA@75V
CT(pF) Max @ VR = 0V, f = 1MHz 2

Related Content

Packages

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Technical Documents

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2544 2021-10-05 2022-01-05 Phenitec Wafer Manufacturing Site Change and Additional Wafer Source on Select Products
PCN-2461 2020-05-08 2021-04-05 Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site
PCN-2315 2018-03-09 2018-06-09 Qualification of Alternative Wafer Sources for Select Products Due to Closure of Diodes FabTech (KFAB) Facility

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