Schottky
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
Compliance (Only Automotive Supports PPAP) |
Standard |
|---|---|
AEC Qualified |
Yes |
Configuration |
Single |
Power Rating(mW) |
200 mW |
Peak RepetitiveReverse VoltageVRRM (V) |
30 V |
Forward Continuous Current IFM (mA) |
200 mA |
Forward VoltageDrop VF(V) |
0.33 |
@ IF(mA) |
2 mA |
Maximum ReverseCurrent IR (µA) |
0.5 µA |
@ VR (V) |
25 V |
Capacitance CTOT Typ (pF) |
10 pF |
Something went wrong with your request. Please try again later. If this problem continues, please contact Diodes support for assistance.
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2690 | 2024-05-29 | 2024-08-29 | Qualification of Diodes’ subcontractor Eris Technology Corporation (Eris) in Taoyuan, Taiwan as Additional Assembly & Test Site and Diodes internal JKFAB in HsinChu, Taiwan as additional wafer source for Select Discrete Products. |
| PCN-2562 | 2022-01-04 | 2022-04-04 | Qualification of Additional Wafer Back Grinding and Back Metal Process Source (GFAB) for Select Discrete Products |
| PCN-2477 | 2020-08-17 | 2021-05-09 | Additional Wafer Source (GFAB), and Transfer Assembly and Test Site to DiYi |
| PCN-2461 | 2020-05-08 | 2021-04-05 | Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site |
