BAS521Q

HIGH VOLTAGE SWITCHING DIODE

Datasheet

Contact Sales

Feature(s)

Fast Switching Speed: max. 50 ns
High Reverse Breakdown Voltage: 300V
Low Leakage Current: 100nA at room temperature
Ultra Small Plastic SMD Package
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free. “Green” Device
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Automotive
AEC Qualified	Yes
Configuration	Single
Polarity	Anode, Cathode
Power Rating(mW)	325 mW
ESD Diodes (Y\|N)	No
Peak RepetitiveReverse VoltageV_RRM(V)	300 V
Reverse RecoveryTime trr (ns)	50 ns
Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100Ω	50
V(BR)R (V) Min @IR=100μA	300
Maximum Average Rectifier Current I_{O (mA)}	250 mA
Maximum Peak Forward Surge Current I_{FSM (A)}	4.5 A
Forward Voltage Drop V_F @ I_{F (mA)}	1.1 mA
Maximum ReverseCurrent I_R(µA)	0.15 µA
TotalCapacitance C_T(pF)	5 pF
VF(V) Max @ IF=100mA	1
Maximum Reverse Current I_R @ V_{R (V)}	300 V
IR(uA) Max @ VR=80V	150nA@250V
CT(pF) Max @ VR = 0V, f = 1MHz	5

Technical Documents

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2629	2023-05-15	2023-11-15	Device End of Life (EOL) - Automotive
PCN-2545	2021-10-05	2022-01-05	Phenitec Wafer Manufacturing Site Change and Additional Wafer Source on Select Automotive Products
PCN-2462	2020-05-08	2021-04-11	Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site (Automotive)