BAS521LPQ (NRND)

NRND = Not Recommended for New Design

HIGH VOLTAGE SWITCHING DIODE

Datasheet

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Feature(s)

Fast Switching Speed: Maximum of 50ns
High Reverse Breakdown Voltage: 325V
Low Leakage Current: Maximum of 50nA when VR = 5V or Maximum of 150nA when VR = 250V at Room Temperature
Ultra Small Plastic SMD Package: 1.0mm x 0.6mm x 0.5mm
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free. "Green" Device
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable

Specifications & Technical Documents

Product Parameters

Configuration	Single
CT(pF) Max @ VR = 0V, f = 1MHz	5
ESD Diodes (Y\|N)	No
Forward Voltage Drop V_F @ I_{F (mA)}	1.1
IR(nA) Max @ VR=5V	N/A
IR(µA) Max @ VR=30V	N/A
IR(uA) Max @ VR=80V	150nA@250V
Maximum Average Rectifier Current I_{O (mA)}	400
Maximum Peak Forward Surge Current I_{FSM (A)}	8
Maximum ReverseCurrent I_R(µA)	0.15
Maximum Reverse Current I_R @ V_{R (V)}	325
Peak RepetitiveReverse VoltageV_RRM(V)	325
Polarity	Anode, Cathode
Power Rating(mW)	400
AEC Qualified	Yes
Reverse RecoveryTime trr (ns)	50
TotalCapacitance C_T(pF)	5
VF(V) Max @ IF=1.0mA	N/A
VF(V) Max @ IF=100mA	1
VF(V) Max @ IF=10mA	N/A

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2502	2021-03-15	2021-09-15	Device End of Life (EOL)
PCN-2462	2020-05-08	2021-04-11	Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site (Automotive)