Diodes Incorporated
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BAS521LPQ (Not Recommended for new design)

NRND = Not Recommended for New Design


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  • Fast Switching Speed: Maximum of 50ns
  • High Reverse Breakdown Voltage: 325V
  • Low Leakage Current: Maximum of 50nA when VR = 5V or Maximum of 150nA when VR = 250V at Room Temperature
  • Ultra Small Plastic SMD Package: 1.0mm x 0.6mm x 0.5mm
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. "Green" Device
  • Qualified to AEC-Q101 Standards for High Reliability
  • PPAP Capable

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) Yes
Configuration Single
CT(pF) Max @ VR = 0V, f = 1MHz 5
ESD Diodes (Y|N) No
Forward Voltage Drop VF @ IF (mA) 1.1
IR(nA) Max @ VR=5V N/A
IR(µA) Max @ VR=30V N/A
IR(uA) Max @ VR=80V 150nA@250V
Maximum Average Rectifier Current IO (mA) 400
Maximum Peak Forward Surge Current IFSM (A) 8
Maximum ReverseCurrent IR (µA) 0.15
Maximum Reverse Current IR @ VR (V) 325
Peak RepetitiveReverse VoltageVRRM (V) 325
Polarity Anode, Cathode
Power Rating(mW) 400
AEC Qualified Yes
Reverse RecoveryTime trr (ns) 50
TotalCapacitance CT (pF) 5
Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100Ω 50
V(BR)R (V) Min (µA) 300
VF(V) Max @ IF=1.0mA N/A
VF(V) Max @ IF=100mA 1
VF(V) Max @ IF=10mA N/A

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Technical Documents

Recommended Soldering Techniques



Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2502 2021-03-15 2021-09-15 Device End of Life (EOL)
PCN-2462 2020-05-08 2021-04-11 Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site (Automotive)
PCN-2319 2018-03-09 2018-06-09 Qualification of Alternative Wafer Sources for Select Automotive Products Due to Closure of Diodes FabTech (KFAB) Facility