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SOT23.pngHIGH SPEED HIGH CURRENT QUAD SWITCHING DIODE
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High-Speed High-Current Quad Switching Diode
• High-Switching Speed, High Current
• Surface Mount Package Ideally Suited for Automated Insertion
• For General Purpose Switching Applications
• High Conductance
| AEC Qualified | Yes |
|---|---|
| Compliance (Only Automotive supports PPAP) | Standard |
| Configuration | Dual, Series |
| Polarity | Anode, Cathode |
| Power Rating(mW) | 300 mW |
| ESD Diodes (Y|N) | No |
| Peak RepetitiveReverse VoltageVRRM (V) | 100 V |
| Reverse RecoveryTime trr (ns) | 6 ns |
| Maximum Peak Forward Surge Current IFSM (A) | 9 A |
| Forward Voltage Drop VF @ IF (mA) | 0.715V @ 1mA mA |
| Maximum ReverseCurrent IR (µA) | 1 µA |
| TotalCapacitance CT (pF) | 1.5 pF |
| V(BR)R (V) Min @IR=100μA | 100 |
| Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100Ω | 6 |
| Maximum Reverse Current IR @ VR (V) | 1?A @ 100 V V |
| VF(V) Max @ IF=1.0mA | 0.715 |
| CT(pF) Max @ VR = 0V, f = 1MHz | 1.5 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2461 | 2020-05-08 | 2021-04-05 | Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site |
