Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT23
HIGH SPEED HIGH CURRENT QUAD SWITCHING DIODE
Contact Sales
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
High-Speed High-Current Quad Switching Diode
• High-Switching Speed, High Current
• Surface Mount Package Ideally Suited for Automated Insertion
• For General Purpose Switching Applications
• High Conductance
Compliance (Only Automotive Supports PPAP) |
Standard |
|---|---|
AEC Qualified |
Yes |
Configuration |
Dual, Series |
Polarity |
Anode, Cathode |
Power Rating(mW) |
300 mW |
ESD Diodes (Y|N) |
No |
Peak RepetitiveReverse VoltageVRRM (V) |
100 V |
Reverse RecoveryTime trr (ns) |
6 ns |
Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100Ω |
6 |
V(BR)R (V) Min @IR=100μA |
100 |
Maximum Peak Forward Surge Current IFSM (A) |
9 A |
Forward Voltage Drop VF @ IF (mA) |
0.715V @ 1mA mA |
Maximum ReverseCurrent IR (µA) |
1 µA |
TotalCapacitance CT (pF) |
1.5 pF |
Maximum Reverse Current IR @ VR (V) |
1?A @ 100 V V |
VF(V) Max @ IF=1.0mA |
0.715 |
CT(pF) Max @ VR = 0V, f = 1MHz |
1.5 |
Something went wrong with your request. Please try again later. If this problem continues, please contact Diodes support for assistance.
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2770 | 2025-10-30 | 2025-10-30 | Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products |
| PCN-2690 | 2024-05-29 | 2024-08-29 | Qualification of Diodes’ subcontractor Eris Technology Corporation (Eris) in Taoyuan, Taiwan as Additional Assembly & Test Site and Diodes internal JKFAB in HsinChu, Taiwan as additional wafer source for Select Discrete Products. |
| PCN-2461 | 2020-05-08 | 2021-04-05 | Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site |
