Diodes Incorporated — Analog and discrete power solutions
SOT23

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BAS299

HIGH SPEED HIGH CURRENT QUAD SWITCHING DIODE

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Description

High-Speed High-Current Quad Switching Diode

Feature(s)

• High-Switching Speed, High Current
• Surface Mount Package Ideally Suited for Automated Insertion
• For General Purpose Switching Applications
• High Conductance

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive supports PPAP) Standard
Configuration Dual, Series
Polarity Anode, Cathode
Power Rating(mW) 300 mW
ESD Diodes (Y|N) No
Peak RepetitiveReverse VoltageVRRM (V) 100 V
Reverse RecoveryTime trr (ns) 6 ns
Maximum Peak Forward Surge Current IFSM (A) 9 A
Forward Voltage Drop VF @ IF (mA) 0.715V @ 1mA mA
Maximum ReverseCurrent IR (µA) 1 µA
TotalCapacitance CT (pF) 1.5 pF
V(BR)R (V) Min @IR=100μA 100
Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100Ω 6
Maximum Reverse Current IR @ VR (V) 1?A @ 100 V V
VF(V) Max @ IF=1.0mA 0.715
CT(pF) Max @ VR = 0V, f = 1MHz 1.5

Technical Documents

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2690 2024-05-29 2024-08-29 Qualification of Diodes’ subcontractor Eris Technology Corporation (Eris) in Taoyuan, Taiwan as Additional Assembly & Test Site and Diodes internal JKFAB in HsinChu, Taiwan as additional wafer source for Select Discrete Products.
PCN-2461 2020-05-08 2021-04-05 Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site