Diodes Incorporated
SOT23

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BAS16

switching diode

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Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive supports PPAP) Standard
Configuration Single
Polarity Anode, Cathode
Power Rating(mW) 350 mW
ESD Diodes (Y|N) No
Peak RepetitiveReverse VoltageVRRM (V) 75 V
Reverse RecoveryTime trr (ns) 4 ns
Maximum Average Rectifier Current IO (mA) 200 mA
Maximum Peak Forward Surge Current IFSM (A) 2 A
Forward Voltage Drop VF @ IF (mA) 1 mA
Maximum ReverseCurrent IR (µA) 1 µA
TotalCapacitance CT (pF) 2 pF
VF(V) Max @ IF=100mA 1
V(BR)R (V) Min @IR=100μA 75
Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100Ω 4
Maximum Reverse Current IR @ VR (V) 75 V
CT(pF) Max @ VR = 0V, f = 1MHz 2

Related Content

Packages

Technical Documents

SPICE Model

MDS Reports

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2690 2024-05-29 2024-08-29 Qualification of Diodes’ subcontractor Eris Technology Corporation (Eris) in Taoyuan, Taiwan as Additional Assembly & Test Site and Diodes internal JKFAB in HsinChu, Taiwan as additional wafer source for Select Discrete Products.
PCN-2584 2022-05-19 2022-11-19 Device End of Life (EOL)
PCN-2461 2020-05-08 2021-04-05 Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site
PCN-2389 2019-02-05 2019-08-05 Device End of Life
PCN-2315 2018-03-09 2018-06-09 Qualification of Alternative Wafer Sources for Select Products Due to Closure of Diodes FabTech (KFAB) Facility