Diodes Incorporated
SMC

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B340CE

3.0A SCHOTTKY BARRIER RECTIFIER

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Description

The schottky rectifier providing low VF and excellent reverse leakage stability at high temperatures, this device is ideal for use in general rectification applications.

Feature(s)

  • Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation
  • Reduced High-temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation.
  • Lead-Free Finish; RoHS Compliant
  • Halogen and Antimony Free. “Green” Device

Application(s)

  • Boost Diodes
  • Blocking Diodes
  • Recirculating Diodes

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive supports PPAP) Standard
Configuration Single
MaximumAverageRectifiedCurrent IO (A) 3 A
@ TerminalTemperature TT (ºC) N/A ºC
Peak RepetitiveReverse VoltageVRRM (V) 40 V
Peak ForwardSurge CurrentIFSM(A) 80 A
Forward VoltageDrop VF(V) 0.5 V
@ IF (A) 3 A
Maximum ReverseCurrent IR (µA) 200 µA
@ VR (V) 40 V
TotalCapacitance CT (pF) 140 pF

Technical Documents

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2623 2023-05-15 2023-11-15 Device End of Life (EOL)
PCN-2588 2022-06-01 2022-09-01 Qualification of Additional Clip Bonding, Lead Frame Structure (Matrix) and Mold Compound, and Qualification of Additional
Diodes Internal Assembly & Test Site (SSEC) for Select Discrete Products
PCN-2477 2020-08-17 2021-05-09 Additional Wafer Source (GFAB), and Transfer Assembly and Test Site to DiYi
PCN-2460 2020-05-12 2020-05-12 Qualified Additional Wafer Source and BGBM Source
PCN-2398 2019-05-21 2019-08-21 Transfer Assembly Lines to Eris Assembly Site (Plant 2) in Taoyuan, Taiwan from the Existing Assembly Site (Plant 1) in Taipei City, Taiwan for Select Discrete Products