Diodes Incorporated
SMB

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B270

Schottky

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Feature(s)

  • Schottky Barrier Chip
  • Guard Ring Die Construction for Transient Protection
  • Low Power Loss, High Efficiency
  • Surge Overload Rating to 50A Peak
  • For Use in Low-Voltage, High-Frequency Inverters, Free Wheeling, and Polarity Protection Application
  • High-Temperature Soldering: +260°C/10 Second at Terminal
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • An automotive-compliant part is available under separate datasheet (B270Q-B2100Q)

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive supports PPAP) Standard
Configuration Single
MaximumAverageRectifiedCurrent IO (A) 2 A
@ TerminalTemperature TT (ºC) 125 ºC
Peak RepetitiveReverse VoltageVRRM (V) 70 V
Peak ForwardSurge CurrentIFSM(A) 50 A
Forward VoltageDrop VF(V) 0.79 V
@ IF (A) 2 A
Maximum ReverseCurrent IR (µA) 7 µA
@ VR (V) 70 V
TotalCapacitance CT (pF) 75 pF

Related Content

Packages

Technical Documents

SPICE Model

MDS Reports

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2588 2022-06-01 2022-09-01 Qualification of Additional Clip Bonding, Lead Frame Structure (Matrix) and Mold Compound, and Qualification of Additional
Diodes Internal Assembly & Test Site (SSEC) for Select Discrete Products
PCN-2550 2021-12-20 2022-06-20 Device End of Life (EOL)
PCN-2477 2020-08-17 2021-05-09 Additional Wafer Source (GFAB), and Transfer Assembly and Test Site to DiYi
PCN-2398 2019-05-21 2019-08-21 Transfer Assembly Lines to Eris Assembly Site (Plant 2) in Taoyuan, Taiwan from the Existing Assembly Site (Plant 1) in Taipei City, Taiwan for Select Discrete Products
PCN-2339 2018-06-15 2018-09-15 Qualification of Additional Wafer Source for Select Products