N-CHANNEL ENHANCEMENT MODE MOSFET
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- Low-On Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Ultra-Small Surface Mount Package
- Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- Qualified to AEC-Q101 Standards for High Reliability
| AEC Qualified | Yes |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | N |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 60 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TA = +25°C (A) | 0.115 A |
| PD @TA = +25°C (W) | 0.2 W |
| RDS(ON)Max@ VGS(10V)(mΩ) | 13500 mΩ |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 7500 @5V mΩ |
| |VGS(TH)| Max (V) | 2 V |
| CISS Typ (pF) | 22 @ 25V pF |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2561 | 2022-02-17 | 2022-08-17 | Device End of Life (EOL) |
| PCN-2458 | 2020-07-01 | 2020-10-01 | Qualification of Assembly & Test Site Transfer, and Additional Assembly & Test Site for Select Discrete Products |
| PCN-2425 | 2019-10-04 | 2020-01-04 | Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and Additional Wafer Source for Select Products. |
| PCN-2403 | 2019-03-25 | 2019-06-19 | Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, Additional Wafer Source, or Additional Assembly and Test site for Select Products. |
| PCN-2374 | 2018-12-07 | 2019-03-07 | Qualification of "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site, Conversion to Palladium Coated Copper Bond Wire with New Molding Compound, and Qualification of Alternative Die Source on Select Products |
