Diodes Incorporated — Analog and discrete power solutions
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2DA1213YQ

PNP,50V, 2A, SOT89

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Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirement of Automotive Applications.

Feature(s)

  • BVCEO > -50V
  • IC = -2A High Continuous Collector Current
  • High Gain Holds up
  • Totally Lead-Free &

Specifications & Technical Documents

Product Parameters

RCE(sat) (mΩ) -
Compliance (Only Automotive Supports PPAP) Automotive
Category Medium Power Transistor
Polarity PNP
VCEO, VCES (V) 50
IC (A) 2
ICM (A) 2.5
PD (W) 1
hFE (Min) 120
hFE (@ IC) (A) 0.5
hFE(Min 2) 20
hFE (@ IC2) (A) 2
VCE(sat) Max (mV) 500
VCE(SAT) (@ IC/IB) (A/mA) 1/50
VCE(sat) (Max.2) (mV) -
VCE(sat) (@ IC/IB2) (A/mA) -
fT (MHz) 160

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

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