Switching Diode
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Compliance (Only Automotive Supports PPAP) |
Standard |
|---|---|
AEC Qualified |
No |
Configuration |
Single |
Polarity |
Anode, Cathode |
Power Rating(mW) |
350 mW |
ESD Diodes (Y|N) |
No |
Peak RepetitiveReverse VoltageVRRM (V) |
80 V |
Reverse RecoveryTime trr (ns) |
4 ns |
Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100Ω |
4 |
V(BR)R (V) Min @IR=100μA |
80 |
Maximum Average Rectifier Current IO (mA) |
100 mA |
Maximum Peak Forward Surge Current IFSM (A) |
2 A |
Forward Voltage Drop VF @ IF (mA) |
100, 1.2 mA |
Maximum ReverseCurrent IR (µA) |
0.5 µA |
TotalCapacitance CT (pF) |
3 pF |
VF(V) Max @ IF=100mA |
1 |
Maximum Reverse Current IR @ VR (V) |
80 V |
IR(uA) Max @ VR=80V |
0.5 |
CT(pF) Max @ VR = 0V, f = 1MHz |
3 |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2461 | 2020-05-08 | 2021-04-05 | Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site |
