switching diode
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Compliance (Only Automotive Supports PPAP) |
Standard |
|---|---|
AEC Qualified |
Yes |
Configuration |
Single |
Polarity |
Anode, Cathode |
Power Rating(mW) |
200 mW |
ESD Diodes (Y|N) |
No |
Peak RepetitiveReverse VoltageVRRM (V) |
80 V |
Reverse RecoveryTime trr (ns) |
4 ns |
Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100Ω |
4 |
V(BR)R (V) Min @IR=100μA |
80 |
Maximum Average Rectifier Current IO (mA) |
250 mA |
Maximum Peak Forward Surge Current IFSM (A) |
4 A |
Forward Voltage Drop VF @ IF (mA) |
1 mA |
Maximum ReverseCurrent IR (µA) |
0.1 µA |
TotalCapacitance CT (pF) |
3.5 pF |
Maximum Reverse Current IR @ VR (V) |
80 V |
VF(V) Max @ IF=1.0mA |
0.715 |
VF(V) Max @ IF=10mA |
0.855 |
CT(pF) Max @ VR = 0V, f = 1MHz |
3.5 |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2770 | 2025-10-30 | 2025-10-30 | Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products |
| PCN-2690 | 2024-05-29 | 2024-08-29 | Qualification of Diodes’ subcontractor Eris Technology Corporation (Eris) in Taoyuan, Taiwan as Additional Assembly & Test Site and Diodes internal JKFAB in HsinChu, Taiwan as additional wafer source for Select Discrete Products. |
| PCN-2456 | 2020-05-29 | 2020-08-29 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site Using Copper or Palladium Coated Copper Bond Wire with Standardization of Assembly Bill of Materials, Or as an Additional Wafer Plating, Back Grinding and Back Metal Process Source, and Qualification of Additional Wafer Source for Select Discrete Products. |
| PCN-2461 | 2020-05-08 | 2021-04-05 | Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site |
