Diodes Incorporated
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ZXMP10A17GQ

100V P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Fast Switching Speed
  • Low Input Capacitance
  • Low Gate Drive

Application(s)

  • Motor Control
  • DC-DC Converters
  • Power Management Functions
  • Relay and Solenoid Driving

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity P
ESD Diodes (Y|N) No
|VDS| (V) 100 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 2.4 A
PD @TA = +25°C (W) 2 W
RDS(ON)Max@ VGS(10V)(mΩ) 350 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 450(@6V) mΩ
|VGS(TH)| Max (V) 4 V
QG Typ @ |VGS| = 4.5V (nC) 7.1(@6V) nC
QG Typ @ |VGS| = 10V (nC) 10.7 nC
CISS Typ (pF) 424 pF
CISS Condition @|VDS| (V) 50 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf