Diodes Incorporated — Analog and discrete power solutions
Back to ZXMP10A17GQ

ZXMP10A17GQ

100V P-Channel Enhancement Mode MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Fast Switching Speed
  • Low Input Capacitance
  • Low Gate Drive

Application(s)

  • Motor Control
  • DC-DC Converters
  • Power Management Functions
  • Relay and Solenoid Driving

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Automotive

AEC Qualified

Yes

Polarity

P

ESD Diodes (Y|N)

No

|VDS| (V)

100 V

|VGS| (±V)

20 ±V

|IDS| @TA = +25°C (A)

2.4 A

PD @TA = +25°C (W)

2 W

RDS(ON)Max@ VGS(10V)  (mΩ)

350 mΩ

RDS(ON)Max@ VGS(4.5V)  (mΩ)

450(@6V) mΩ

|VGS(TH)| Max (V)

4 V

QG Typ @ |VGS| = 4.5V (nC)

7.1(@6V) nC

QG Typ @ |VGS| = 10V (nC)

10.7 nC

CISS Typ (pF)

424 pF

CISS Condition @|VDS| (V)

50 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

Something went wrong with your request. Please try again later. If this problem continues, please contact Diodes support for assistance.