Description

This new generation MOSFET has been designed to minimize the on-state resistance (R_DS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

Low On-Resistance
Fast Switching Speed
Low Threshold
Low Gate Drive
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The ZXMN4A06GQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

DC-DC converters
Audio output stages
Relay and solenoid driving
Motor control

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Automotive
AEC Qualified	Yes
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	40 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	7 A
\|I_DS\| @T_C = +25°C (A)	- A
P_D @T_A = +25°C (W)	2 W
P_D @T_C = +25°C (W)	- W
R_DS(ON)Max@ V_GS(10V) (mΩ)	50 mΩ
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	75 mΩ
R_DS(ON)Max@ V_GS(2.5V) (mΩ)	- mΩ
R_DS(ON)Max@ V_GS(1.8V) (mΩ)	- mΩ
\|V_GS(TH)\| Min (V)	1 V
\|V_GS(TH)\| Max (V)	2 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	- nC
Q_G Typ @ \|V_GS\| = 10V (nC)	19 nC
C_ISS Typ (pF)	746 pF
C_ISS Condition @\|V_DS\| (V)	40 V

Technical Documents

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2770	2025-10-30	2025-10-30	Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products

ZXMN4A06GQ