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60V SO8 Complementary enhancement mode MOSFET H-Bridge

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This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive.


  • DC Motor control
  • DC-AC Inverters
  • Product Specifications

    Product Parameters

    AEC Qualified No
    Compliance (Only Automotive(Q) supports PPAP) Standard
    Polarity 2N2P
    ESD Diodes (Y|N) No
    |VDS| (V) 60 V
    |VGS| (±V) 20 ±V
    |IDS| @TA = +25°C (A) 1.39, 1.28 A
    PD @TA = +25°C (W) 0.87 W
    RDS(ON)Max@ VGS(10V)(mΩ) 250, 400 mΩ
    RDS(ON)Max@ VGS(4.5V)(mΩ) 350, 600 mΩ
    QG Typ @ |VGS| = 10V (nC) 3.2, 5.1 nC
    CISS Typ (pF) 166, 141 pF
    CISS Condition @|VDS| (V) 40, 50 V

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