Diodes Incorporated
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T12M5T600B(LS)

Sensitive Gate Triacs Silicon Bidirectional Thyristors

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Feature(s)

  • Blocking voltage to 600V
  • High Surge Current Capability - 90 Amperes
  • Glass Passivated Junctions for Reliability and Uniformity
  • Maximum Values of IGT, VGT and IH Specified for Ease of Design
  • Operational in Three Quadrants: Q1, Q2, and Q3
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) Standard
AEC Qualified Yes
TJ MAX (°C) 110 °C
ITRMS(A) 12 A
VTM Max(V) 1.85 V
IGT MAX (mA) 5 mA
IDRM MAX (uA) 10 uA
ITRM / ITSM (A) 90 A
IH Max (mA) 10 mA
VDRM MAX(V) 600 V
VDRM / RRM (V) 600 V

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf