Diodes Incorporated

PI3PD22919 (Obsolete)

NOTE: Datasheet may not yet reflect updated package obsolescence/phase out status or Package Drawing. Please refer to the BUY NOW tab for the most up to date package options and drawings. Please refer to PCN/PDN tabs for most current package obsolescence/phase out status.
Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

The PI3PD22919 is a small, ultra-low rON load switch with controlled turn on. The device contains a N-channel MOSFET that can operate over an input voltage range of 0.75 V to 3.6 V and switch currents up to 4-A. An integrated charge pump biases the NMOS switch in order to achieve a minimum switch ON resistance (rON). The switch is controlled by an on/off input (ON), via an active low enable pin.

The PI3PD22919 has a 1250Ω on-chip load resistor for quick output discharge when the switch is turned off. The PI3D22919 has an internally controlled rise time in order to reduce inrush current. The PI3D22919 features a rise time of 880μS at 3.6V.

The PI3D22919 is available in an ultra-small, space-saving 8-pin CSP package and is characterized for operation over the free-air temperature range of –40°C to 85°C. 

Features

  • Integrated Load Switch
  • Input Voltage: 0.75-V to 3.6-V
  • Ultra-Low ON Resistance:
    • Max RON over temperature = 9.8mΩ at VIN = 3.6V
  • Ultra Small CSP-8 package
    • 0.95 mm x 1.95 mm, 0.5-mm Pitch
  • 4-A Maximum Continuous Switch Current
  • Shutdown Current 5.5-μA max
  • Low Threshold Control Input
  • Controlled Slew Rate to Avoid Inrush Currents
  • Quick Output Discharge Transistor
  • ESD Performance Tested Per JESD 22
    • 4000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)

Applications

  • Notebook / Netbook Computer
  • Tablet PC
  • PDAs / Smartphones
  • GPS Navigation Devices
  • MP3 Players

Product Specifications

Product Parameters

Related Content

Quality Documentation

Technical Documents

Recommended Soldering Techniques

TN1.pdf