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Description

This bipolar junction transistor (BJT) is designed to meet the stringent requirements of automotive applications.

Feature(s)

  • BVCEO > 160V
  • Ideal for Low Power Amplification and Switching
  • Complementary PNP Type Available (MMBT5401)
  • Totally Lead-Free & Fully RoHS compliant 
  • Halogen- and Antimony-Free. “Green” Device 
  • The MMBT5551Q is suitable for automotive applications
    requiring specific change control; this part is AEC-Q101
    qualified, PPAP capable, and manufactured in IATF16949
    certified facilities.
    https://www.diodes.com/quality/product-definitions/

Product Specifications

Product Parameters

Qualified to AEC-Q10x Yes
Compliance (Only Automotive supports PPAP) Automotive
VCEO, VCES (V) 160 V
IC (A) 600 A
ICM (A) - A
PD (W) 300 W
hFE(@ IC) 0.01 A
hFE(Min 2) 30
hFE(@ IC2) 0.05 A
VCE (SAT)Max (mV) 150 mV
VCE (SAT) (@ IC/IB) (A/m A) 0.01/1
VCE (SAT) (@ IC/IB2) (A/mA) 0.05/5
fT (MHz) 100
VCE (SAT)(Max.2) 200 mV
RCE(SAT) N/A mΩ

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC