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SOT23

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MMBD2004SQ

switching diode

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Description

High-voltage Surface Mount Dual Switching Diode

Feature(s)

• Fast Switching Speed: Maximum of 50ns

• High Reverse Breakdown Voltage: 300V

• Low Leakage Current: Maximum of 100nA when VR = 240V at Room Temperature

• Surface Mount Package Ideally Suited for Automated Insertion

• Dual Series Configuration

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Automotive

AEC Qualified

Yes

Configuration

Dual, Series

Polarity

Anode, Cathode

Power Rating(mW)

350 mW

ESD Diodes (Y|N)

No

Peak RepetitiveReverse VoltageVRRM (V)

300 V

Reverse RecoveryTime trr (ns)

50 ns

Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100Ω

50

V(BR)R (V) Min @IR=100μA

300

Maximum Average Rectifier Current IO (mA)

225 mA

Maximum Peak Forward Surge Current IFSM (A)

4 A

Forward Voltage Drop VF @ IF (mA)

1 mA

Maximum ReverseCurrent IR (µA)

0.1 µA

TotalCapacitance CT (pF)

5 pF

VF(V) Max @ IF=100mA

1

Maximum Reverse Current IR @ VR (V)

240 V

VF(V) Max @ IF=10mA

0.855

IR(uA) Max @ VR=80V

100nA@240V

CT(pF) Max @ VR = 0V, f = 1MHz

5

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2770 2025-10-30 2025-10-30 Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products
PCN-2545 2021-10-05 2022-01-05 Phenitec Wafer Manufacturing Site Change and Additional Wafer Source on Select Automotive Products
PCN-2462 2020-05-08 2021-04-11 Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site (Automotive)