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Description

High-voltage Surface Mount Dual Switching Diode

Feature(s)

• Fast Switching Speed: Maximum of 50ns

• High Reverse Breakdown Voltage: 300V

• Low Leakage Current: Maximum of 100nA when VR = 240V at Room Temperature

• Surface Mount Package Ideally Suited for Automated Insertion

• Dual Series Configuration

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Product Specifications

Product Parameters

Qualified to AEC-Q10x Yes
Compliance (Only Automotive supports PPAP) Yes
Configuration Dual, Series
Polarity Anode, Cathode
Power Rating (mW) 350 mW
ESD Diodes (Y|N) No Y/N
Peak RepetitiveReverse VoltageVRRM (V) 300 V
Reverse Recovery Time trr (ns) 50 ns
Maximum Average Rectifier Current IO (mA) 225 mA
Maximum Peak Forward Surge Current IFSM (A) 4 A
Forward Voltage Drop VF @ IF (mA) 0, 1 mA
Maximum ReverseCurrent IR (µA) 0.1 µA
Maximum Reverse Current IR @ VR (V) 240 V
V(BR)R (V) Min (µA) 300
TotalCapacitance CT (pF) 5 pF
VF(V) Max @ IF=1.0mA N/A
VF(V) Max @ IF=10mA 0.855
VF(V) Max @ IF=100mA 1
IR(nA) Max @ VR=5V N/A
IR(µA) Max @ VR=30V N/A
IR(uA) Max @ VR=80V 100nA@240V
CT(pF) Max @ VR = 0V, f = 1MHz 5
Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100Ω 50

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

PCNs

Product Change Notices

PCN # Issue Date Implementation Date Subject
PCN-2462 2020-05-08 2021-04-11 Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site (Automotive)
PCN-2319 2018-03-09 2018-06-09 Qualification of Alternative Wafer Sources for Select Automotive Products Due to Closure of Diodes FabTech (KFAB) Facility
PCN-2269 2017-04-21 2017-04-21 Qualification of Alternative Wafer Sources for Select Automotive Products Due to Closure of Diodes FabTech (KFAB) Facility