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DMTH8001STLW

80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI1012-8

Datasheet

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Description

This new generation N-Channel enhancement mode MOSFET is designed to minimize R_DS(ON)yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switches.

Feature(s)

Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
High Conversion Efficiency
Low R_DS(ON)– Minimizes On-state Losses
Wettable Flank for Improved Optical Inspection
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
An automotive-compliant part is available under separate datasheet (DMTH8001STLWQ)

Application(s)

Motor controls
DC-DC converters
Power management

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	80 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_C = +25°C (A)	270 A
P_D @T_A = +25°C (W)	6 W
P_D @T_C = +25°C (W)	250 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	1.7 mΩ
\|V_GS(TH)\| Max (V)	4 V
Q_G Typ @ \|V_GS\| = 10V (nC)	138 nC
C_ISS Typ (pF)	8894 pF
C_ISS Condition @\|V_DS\| (V)	50 V

Technical Documents

SPICE Model

DMTH8001STLW .spice.txt

Recommended Soldering Techniques

TN1.pdf