Diodes Incorporated — Analog and discrete power solutions
PowerDI5060 8

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DMTH10H4M5LPS

100V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation N-Channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.

Feature(s)

  • 100% Unclamped Inductive Switching (UIS) Test in Production Ensures More Reliable and Robust End Application
  • High Conversion Efficiency
  • Low RDS(ON)—Minimizes On-State Losses
  • Low Input Capacitance
  • Fast Switching Speed

Application(s)

  • Motor Control
  • DC-DC Converters
  • Power Management

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 100 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 20
|IDS| @TC = +25°C (A) 100
PD @TA = +25°C (W) 2.7
PD @TC = +25°C (W) 136
RDS(ON)Max@ VGS(10V)(mΩ) 4.3 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 6.2 mΩ
|VGS(TH)| Max (V) 2.5 V
QG Typ @ |VGS| = 10V (nC) 80 nC
CISS Typ (pF) 4843 pF
CISS Condition @|VDS| (V) 50 V

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC