Diodes Incorporated
PowerDI1012 8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

POWERDI1012-8-TOLL-.jpg
Back to MOSFET Master Table

DMTH10H1M7STLWQ

100V 175°C N-channel Enhancement Mode MOSFET POWERDI1012-8 (TOLL)

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in:

  • Motor Control
  • DC-DC Converters
  • Power Management

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature
    Environments
  • 100% Unclamped Inductive Switching (UIS) Test in Production –
    Ensures More Reliable and Robust End Application
  • High Conversion Efficiency
  • Low RDS(ON) – Minimizes On State Losses
  • Wettable Flank for Improved Optical Inspection
  • Lead-Free Finish; RoHS Compliant 
  • Halogen and Antimony Free. “Green” Device 
  • The DMTH10H1M7STLWQ is suitable for automotive
    applications requiring specific change control; this part is
    AEC-Q101 qualified, PPAP capable, and manufactured in
    IATF 16949 certified facilities.
    https://www.diodes.com/quality/product-definitions/

PowerDI® is a registered trademark of Diodes Incorporated in the United States and other countries.

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 100 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 250 A
PD @TA = +25°C (W) 6 W
PD @TC = +25°C (W) 250 W
RDS(ON)Max@ VGS(10V)(mΩ) 2 mΩ
|VGS(TH)| Min (V) 2 V
|VGS(TH)| Max (V) 4 V
QG Typ @ |VGS| = 10V (nC) 147 nC
CISS Typ (pF) 9871 pF
CISS Condition @|VDS| (V) 50 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf