Back to MOSFET Master Table

DMTH10H005LCT

N-CHANNEL ENHANCEMENT MODE MOSFET

Contact Sales

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.

Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
Low Input Capacitance
High BVDSS Rating for Power Application
Low Input/Output Leakage

Product Specifications

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	100 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_C = +25°C (A)	140 A
P_D @T_A = +25°C (W)	2.9 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	5 mΩ
\|V_GS(TH)\| Max (V)	3.5 V
Q_G Typ @ \|V_GS\| = 10V (nC)	114 nC
C_ISS Typ (pF)	3688 pF

SPICE Model

DMTH10H005LCT.spice.txt

Recommended Soldering Techniques

TN1.pdf