Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI3333-8

DMT3009UFVW

30V N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

Ultra Low Gate Threshold Voltage
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Wettable Flank for Improved Optical Inspection
ESD Protected Gate
100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

Backlighting
Power Management Functions
DC-DC Converters

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Standard
\|I_DS\| @T_A = +25°C (A)	10.6
\|I_DS\| @T_C = +25°C (A)	30
P_D @T_A = +25°C (W)	2.6
P_D @T_C = +25°C (W)	35.7
AEC Qualified	No
Polarity	N
ESD Diodes (Y\|N)	Yes Y/N
\|V_DS\| (V)	30 V
\|V_GS\| (±V)	12 ±V
R_DS(ON)Max@ V_GS(10V) (mΩ)	11 mΩ
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	13 mΩ
\|V_GS(TH)\| Max (V)	1.8 V
C_ISS Typ (pF)	893 pF
C_ISS Condition @\|V_DS\| (V)	15 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	7.4 nC
Q_G Typ @ V_GS = 5V(nC)	N/A
Q_G Typ @ \|V_GS\| = 10V (nC)	14.6 nC

Technical Documents

SPICE Model

DMT3009UFVW.spice.txt

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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