DMT12H090LFDF4

115V N-Channel Enhancement Mode MOSFET

Datasheet

Contact Sales

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.

Feature(s)

0.4mm Profile—Ideal for Low Profile Applications
PCB Footprint of 4mm2
100% Unclamped Inductive Switching (UIS) Test in Production—Ensures More Reliable and Robust End Application
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)

Application(s)

DC-DC Primary Switch
Load Switch

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Standard
AEC Qualified	No
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	115 V
\|V_GS\| (±V)	12 ±V
\|I_DS\| @T_A = +25°C (A)	3.4 A
P_D @T_A = +25°C (W)	1.6 W
R_DS(ON)Max@ V_GS(10V) (mΩ)	90 mΩ
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	100 mΩ
\|V_GS(TH)\| Max (V)	2.2 V
Q_G Typ @ \|V_GS\| = 10V (nC)	6 nC
C_ISS Typ (pF)	251 pF
C_ISS Condition @\|V_DS\| (V)	50 V

Technical Documents

SPICE Model

DMT12H090LFDF4.spice.txt

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

Something went wrong with your request. Please try again later. If this problem continues, please contact Diodes support for assistance.