Diodes Incorporated — Analog and discrete power solutions
PowerDI3333 8

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DMP4025SFG (NRND)

NRND = Not Recommended for New Design

40V P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

Application(s)

  • Motor control
  • Backlighting
  • DC-DC Converters
  • Printer equipment

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) Standard
CISS Typ (pF) 1643
Compliance (Only Automotive(Q) supports PPAP) Standard
ESD Diodes (Y|N) No
|IDS| @TA = +25°C (A) 7.2
PD @TA = +25°C (W) 1.95
Polarity P
QG Typ@ VGS = -10V N/A
QG Typ@ VGS = -4.5V (nC) N/A
QG Typ @ |VGS| = 10V (nC) 33.7
QG Typ @ |VGS| = 4.5V (nC) 14
AEC Qualified Yes
RDS(ON)Max@ VGS(10V)(mΩ) 25
RDS(ON)Max@ VGS(4.5V)(mΩ) 45
|VDS| (V) 40
|VGS| (±V) 20
|VGS(TH)| Max (V) 1.8

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2498 2021-04-07 2021-04-07 Qualification of Additional Wafer Source, and Additional Assembly and Test (A/T) Site for Select Discrete Products
PCN-2456 2020-05-29 2020-08-29 Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site Using Copper or Palladium Coated Copper Bond Wire with Standardization of Assembly Bill of Materials, Or as an Additional Wafer Plating, Back Grinding and Back Metal Process Source, and Qualification of Additional Wafer Source for Select Discrete Products.