40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101 and supported by a PPAP.
|Compliance (Only Automotive(Q) supports PPAP)||Automotive|
|ESD Diodes (Y|N)||No|
||VDS| (V)||40 V|
||VGS| (±V)||20 ±V|
||IDS| @TC = +25°C (A)||150 A|
|PD @TC = +25°C (W)||165 W|
|RDS(ON)Max @ VGS(10V)(mΩ)||4 mΩ|
||VGS(TH)| Max (V)||3 V|
|QG Typ @ |VGS| = 4.5V (nC)||23 nC|
|QG Typ @ |VGS| = 10V (nC)||48 nC|
|CISS Typ (pF)||2846 pF|
|CISS Condition @|VDS| (V)||20 V|