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DMN68M7SCT

N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

100% Unclamped Inductive Switch (UIS) Test in Production
Low Input Capacitance
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

Motor Control
Backlighting
DC-DC Converters
Power Management Functions

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	68 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_C = +25°C (A)	100 A
P_D @T_C = +25°C (W)	125 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	8 mΩ
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	36 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	72.9 nC
C_ISS Typ (pF)	4260 pF
C_ISS Condition @\|V_DS\| (V)	30 V

Technical Documents

SPICE Model

DMN68M7SCT.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile