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SOT363.pngNRND = Not Recommended for New Design
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
| Compliance (Only Automotive supports PPAP) | Automotive |
|---|---|
| CISS Condition @|VDS| (V) | 25 |
| CISS Typ (pF) | 22 |
| Compliance (Only Automotive(Q) supports PPAP) | Automotive |
| Configuration | Dual |
| ESD Diodes (Y|N) | Yes |
| |IDS| @TA = +25°C (A) | 0.26 |
| PD @TA = +25°C (W) | 0.4 |
| Polarity | N+N |
| Compliance (Only Automotive supports PPAP) | Automotive (Q) |
| QG Typ @ |VGS| = 10V (nC) | 0.87 |
| QG Typ @ |VGS| = 4.5V (nC) | 0.43 |
| AEC Qualified | Yes |
| RDS(ON)Max@ VGS(10V)(mΩ) | 2800 |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 13000 |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 4200 |
| |VDS| (V) | 30 |
| |VGS| (±V) | 20 |
| |VGS(TH)| Max (V) | 1.5 |
| |VGS(TH)| Min (V) | 0.8 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2639 | 2023-09-26 | 2023-12-26 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu Bond Wire with Standardization of Assembly Bill of Materials at CAT for Select Automotive Products |
