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DMN63D8LDWQ (Not Recommended for new design)

NRND = Not Recommended for New Design

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

Dual N-Channel MOSFET
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free. “Green” Device
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable

Application(s)

DC-DC Converters
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP)	Automotive
C_ISS Condition @\|V_DS\| (V)	25
C_ISS Typ (pF)	22
Compliance (Only Automotive(Q) supports PPAP)	Automotive
Configuration	Dual
ESD Diodes (Y\|N)	Yes
\|I_DS\| @T_A = +25°C (A)	0.26
P_D @T_A = +25°C (W)	0.4
Polarity	N+N
Compliance (Only Automotive supports PPAP)	Automotive (Q)
Q_G Typ @ \|V_GS\| = 10V (nC)	0.87
Q_G Typ @ \|V_GS\| = 4.5V (nC)	0.43
AEC Qualified	Yes
R_DS(ON)Max@ V_GS(10V)(mΩ)	2800
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	13000
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	4200
\|V_DS\| (V)	30
\|V_GS\| (±V)	20
\|V_GS(TH)\| Max (V)	1.5
\|V_GS(TH)\| Min (V)	0.8

Technical Documents

SPICE Model

DMN63D8LDWQ.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile