Diodes Incorporated

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DMN5L06DMKQ (Not Recommended for new design)

NRND = Not Recommended for New Design

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Very Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected up to 2kV

Application(s)

  • General Purpose Interfacing Switch
  • Power Management Functions

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) Automotive
CISS Condition @|VDS| (V) 25
CISS Typ (pF) 50
Compliance (Only Automotive(Q) supports PPAP) Automotive
Configuration Dual
ESD Diodes (Y|N) Yes
|IDS| @TA = +25°C (A) 0.305
PD @TA = +25°C (W) 0.4
Polarity N+N
Compliance (Only Automotive supports PPAP) Automotive (Q)
AEC Qualified Yes
RDS(ON)Max@ VGS(1.8V)(mΩ) 3000
RDS(ON)Max@ VGS(2.5V)(mΩ) 2500
RDS(ON)Max@ VGS(4.5V)(mΩ) 2000 (@5V)
|VDS| (V) 50
|VGS| (±V) 20
|VGS(TH)| Max (V) 1

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2579 2022-08-29 2023-02-28 Device End of Life (EOL)
PCN-2485 2020-12-04 2021-03-04 Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu or Au Bond Wire, And Qualification of Additional Wafer Source for Select Discrete Automotive Products