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DMN5L06DMKQ (NRND)

NRND = Not Recommended for New Design

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

Low On-Resistance
Very Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected up to 2kV

Application(s)

General Purpose Interfacing Switch
Power Management Functions

Specifications & Technical Documents

Product Parameters

C_ISS Condition @\|V_DS\| (V)	25
C_ISS Typ (pF)	50
Configuration	Dual
ESD Diodes (Y\|N)	Yes
Polarity	N+N
AEC Qualified	Yes
R_DS(ON)Max@ V_GS(1.8V) (mΩ)	3000
R_DS(ON)Max@ V_GS(2.5V) (mΩ)	2500
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	2000 (@5V)
\|V_DS\| (V)	50
\|V_GS\| (±V)	20
\|V_GS(TH)\| Max (V)	1

Technical Documents

SPICE Model

DMN5L06DMKQ.spice.txt

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2770	2025-10-30	2025-10-30	Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products
PCN-2579	2022-08-29	2023-02-28	Device End of Life (EOL)
PCN-2485	2020-12-04	2021-03-04	Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu or Au Bond Wire, And Qualification of Additional Wafer Source for Select Discrete Automotive Products