Diodes Incorporated
SOT363

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DMN52D0UDW

50V N-Channel Enhancement Mode MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

  • Low On-Resistance
  • Very Low Gate Threshold Voltage (1.0V max)
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • An automotive-compliant part is available under separate datasheet (DMN52D0UDWQ)

Application(s)

  • Load switches
  • Level switches

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+N
ESD Diodes (Y|N) Yes
|VDS| (V) 50 V
|VGS| (±V) 12 ±V
|IDS| @TA = +25°C (A) 0.35 (@ 5V)
PD @TA = +25°C (W) 0.5
RDS(ON)Max@ VGS(4.5V)(mΩ) 2000 (@ 5V) mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 2500 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 4000 mΩ
|VGS(TH)| Min (V) 0.49 V
|VGS(TH)| Max (V) 1 V
QG Typ @ |VGS| = 4.5V (nC) 0.7 nC
QG Typ @ |VGS| = 10V (nC) 1.5 nC
CISS Typ (pF) 42.3 pF
CISS Condition @|VDS| (V) 25 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf