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DMN3061SVT

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)

Application(s)

  • Backlighting
  • DC-DC Converters
  • Power Management Functions

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+N
ESD Diodes (Y|N) No
|VDS| (V) 30, 30 V
|VGS| (±V) 20, 20 ±V
|IDS| @TA = +25°C (A) 3.4, 3.4 A
PD @TA = +25°C (W) 1.08 W
RDS(ON)Max @ VGS(10V)(mΩ) 60, 60 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 100, 100 mΩ
|VGS(TH)| Max (V) 1.8, 1.8 V
QG Typ @ |VGS| = 4.5V (nC) 3.5, 3.5 nC
QG Typ @ |VGS| = 10V (nC) 6.6, 6.6 nC
CISS Typ (pF) 278, 278 pF
CISS Condition @|VDS| (V) 15, 15 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Orderable Part Number Buy from Distributor / Contact Sales Request Samples
DMN3061SVT-7

DMN3061SVT-7

Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
RS Components - Spain 5700 9/25/2022 Spain Contact Sales
RS Components - UK 5700 9/25/2022 England Buy Now
Request Sample

FAQs

Related Application FAQs