60V N-Channel Enhancement Mode MOSFET H-Bridge
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This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive.
Compliance (Only Automotive Supports PPAP) |
Standard |
|---|---|
AEC Qualified |
No |
Polarity |
4N |
ESD Diodes (Y|N) |
No |
|VDS| (V) |
60 V |
|VGS| (±V) |
20 ±V |
|IDS| @TA = +25°C (A) |
10.6 A |
PD @TA = +25°C (W) |
2.7 W |
RDS(ON)Max@ VGS(10V) (mΩ) |
22 mΩ |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
30 mΩ |
|VGS(TH)| Max (V) |
3 V |
QG Typ @ |VGS| = 4.5V (nC) |
8.4 nC |
QG Typ @ |VGS| = 10V (nC) |
17 nC |
CISS Typ (pF) |
864 pF |
CISS Condition @|VDS| (V) |
30 V |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2495 | 2021-03-31 | 2021-07-01 | Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products |
