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DMG1013UWQ

20V P-Channel Enhancement Mode MOSFET

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Feature(s)

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected

Application(s)

  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
  • Battery Operated Systems
  • Power Supply Converter Circuits
  • Load/Power Switching Cell Phones, Pagers

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Automotive

AEC Qualified

Yes

Polarity

P

ESD Diodes (Y|N)

Yes

|VDS| (V)

20 V

|VGS| (±V)

6 ±V

|IDS| @TA = +25°C (A)

0.82 A

PD @TA = +25°C (W)

0.31 W

RDS(ON)Max@ VGS(4.5V)  (mΩ)

750 mΩ

RDS(ON)Max@ VGS(2.5V)  (mΩ)

1050 mΩ

RDS(ON)Max@ VGS(1.8V)  (mΩ)

1500 mΩ

|VGS(TH)| Max (V)

1 V

QG Typ @ |VGS| = 4.5V (nC)

0.622 nC

CISS Typ (pF)

59.76 pF

CISS Condition @|VDS| (V)

16 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2770 2025-10-30 2025-10-30 Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products
PCN-2745 2025-06-13 2025-09-12 Additional Wafer Source for Select Automotive Products
PCN-2485 2020-12-04 2021-03-04 Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu or Au Bond Wire, And Qualification of Additional Wafer Source for Select Discrete Automotive Products