Diodes Incorporated
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DGD2103A (Obsolete)

HALF-BRIDGE GATE DRIVER

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Description

The DGD2103A is a high voltage / high speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing techniques enable the DGD2103A’s high side to switch to 600V in a bootstrap operation.

The DGD2103A logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) to interface easily with controlling devices. The driver outputs feature high pulse current buffers designed for minimum driver cross conduction. DGD2103A has a fixed internal deadtime of 520ns (typical).

The DGD2103A is offered in SO-8 package and operates over an extended -40 °C to +125 °C temperature range.

Feature(s)

  • Floating High-Side Driver in Bootstrap Operation to 600V
  • Drives Two N-Channel MOSFETs or IGBTs in a Half-Bridge Configuration
  • 290mA Source/600mA Sink Output Current Capability
  • Outputs Tolerant to Negative Transients
  • Internal Dead Time of 520ns to Protect MOSFETs
  • Wide Low-Side Gate Driver Supply Voltage: 10V to 20V
  • Logic Input (HIN and LIN*) 3.3V Capability
  • Schmitt Triggered Logic Inputs
  • Undervoltage Lockout for VCC (Logic- And Low-Side Supply)
  • Extended Temperature Range: -40°C to +125°C
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony free. “Green” Device

Application(s)

  • Motor Control
  • AC-DC Power Supplies

Product Specifications

Product Parameters

Inputs HIN, LIN (Out of Phase)
Internal Deadtime (Typ) 520
Offset Voltage Max (V) 600
Output Current IO- (Typ) (mA) 360
Output Current IO+ (Typ) (mA) 210
tF (Typ) (ns) 50
tOFF (Typ) (ns) 150
tON (Typ) (ns) 680
tR (Typ) (ns) 100

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Technical Documents

Recommended Soldering Techniques

TN1.pdf