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DFBR030U3LP (Obsolete)


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Dual 30V N-Channel MOSFETs with Dual 3.0A Super Barrier Rectifier Diodes together packaged in a 4.0 x 4.0 x 0.6 mm DFN Package


1. For two N-channel MOSFET transistors: Drain-Source Breakdown Voltage: 30V Maximum Drain Current: 3.2A
2. For two Super Barrier Rectifier Diodes: Forward Voltage Drop VF less than 0.42V Maximum leakage current IR is less than 400 uA at 25 oC
3. For the Rectifier as a whole: Rectifier Forward Voltage is less than 0.56V. Rectifier leakage and reverse leakage current are less than 1 mA.


Wireless Charging, AC-DC Rectification, Optimized for Power Management Applications for Portable Products.

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) Standard
Compliance (Only Automotive(Q) supports PPAP) Standard
Config/ Polarity Dual 30V N + Dual 30A SBR
ESD Diodes (Y|N) Yes
|IDS| @TA = +25°C (A) 3.2
Ileak(µA) Max @ VLL= 0V, VOUT = 5V 1000
Ileak(µA) Max @ VLL= 16V, no load 1000
IR(µA) Max @ VR=30V 400
IR(µA) Max @ VR=5V 150
PD @TA = +25°C (W) 0.5
Polarity N+N
AEC Qualified No
RDS(ON)Max @ VGS(10V)(mΩ) 26
V(BR)R (V) Min @IR=400µA 30
|VDS| (V) 30
VF(V) Max @ IF=100mA 0.278
VF(V) Max @ IF=1A 0.37
VF(V) Max @ IF=2A 0.42
Vfd2(V) Max @ VLL=+5V, IOUT = 2A 0.56
|VGS| (±V) 20
|VGS(TH)| Max (V) 2.2

Related Content


Technical Documents

Recommended Soldering Techniques


Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2418 2019-11-07 2020-05-07 Device End of Life (EOL)