Diodes Incorporated — Analog and discrete power solutions
SOT23

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT23

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BSS123

N-Channel Enhancement Mode MOSFET

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Description

These N-Channel enhancement mode field effect transistors are produced using Diodes Incorporated’s proprietary, high density and advanced trench technology. These products have been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. These products are particularly suited for low-voltage, low-current applications such as: small servo motor controls, power MOSFET gate drivers, and switching applications.

Feature(s)

  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • High Drain-Source Voltage Rating
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/
  • An automotive-compliant part is available under separate datasheet (BSS123Q)

Application(s)

  • Small servo motor controls
  • Power MOSFET gate drivers
  • Switching applications

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Standard

AEC Qualified

Yes

Polarity

N

ESD Diodes (Y|N)

No

|VDS| (V)

100 V

|VGS| (±V)

20 ±V

|IDS| @TA = +25°C (A)

0.17 A

PD @TA = +25°C (W)

0.3 W

RDS(ON)Max@ VGS(10V)  (mΩ)

6000 mΩ

RDS(ON)Max@ VGS(4.5V)  (mΩ)

10000 mΩ

|VGS(TH)| Max (V)

2 V

CISS Typ (pF)

22 @ 25V pF

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2770 2025-10-30 2025-10-30 Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products
PCN-2690 2024-05-29 2024-08-29 Qualification of Diodes’ subcontractor Eris Technology Corporation (Eris) in Taoyuan, Taiwan as Additional Assembly & Test Site and Diodes internal JKFAB in HsinChu, Taiwan as additional wafer source for Select Discrete Products.
PCN-2561 2022-02-17 2022-08-17 Device End of Life (EOL)
PCN-2484 2020-11-04 2021-02-04 Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu or Au Bond Wire, And Standardization of Assembly Bill of Materials At The Existing CAT Site for Select Discrete Products