Diodes Incorporated

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BAW101V (Not Recommended for new design)

NRND = Not Recommended for New Design

switching diode

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Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) Standard
Configuration Dual, Isolated
CT(pF) Max @ VR = 0V, f = 1MHz 2
ESD Diodes (Y|N) No
Forward Voltage Drop VF @ IF (mA) 1.1
IR(uA) Max @ VR=80V 150nA@250V
Maximum Average Rectifier Current IO (mA) 250
Maximum Peak Forward Surge Current IFSM (A) 8
Maximum ReverseCurrent IR (µA) 0.15
Maximum Reverse Current IR @ VR (V) 250
Peak RepetitiveReverse VoltageVRRM (V) 325
Polarity Anode, Cathode
Power Rating(mW) 500
AEC Qualified Yes
Reverse RecoveryTime trr (ns) 50
TotalCapacitance CT (pF) 2
Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100Ω 50
Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100Ω 50
V(BR)R (V) Min (µA) 300
V(BR)R (V) Min @IR=100μA 300
VF(V) Max @ IF=100mA 1
VF(V) Max @ IF=10mA 0.855

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2544 2021-10-05 2022-01-05 Phenitec Wafer Manufacturing Site Change and Additional Wafer Source on Select Products
PCN-2315 2018-03-09 2018-06-09 Qualification of Alternative Wafer Sources for Select Products Due to Closure of Diodes FabTech (KFAB) Facility