Diodes Incorporated
SOD123F

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BAV21HWF

SURFACE MOUNT HIGH VOLTAGE DIODE

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Description

The BAV21HWF is a 250V, 100nA and 50ns switching diode that is optimized for high reverse breakdown voltage.

Feature(s)

  • High Reverse Breakdown Voltage
  • Flat Leadframe Design for Improved Thermal Transfer
  • High Conductance

Application(s)

  • Mobile phones
  • Portable and Consumer Electronics
  • LCD-TV
  • Smartphones
  • Motor Control
  • Power Supplies
  • Notebooks
  • Monitors

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive supports PPAP) Standard
Configuration Single
Polarity Anode, Cathode
Power Rating (mW) 375 mW
ESD Diodes (Y|N) No
Peak RepetitiveReverse VoltageVRRM (V) 250 V
Reverse RecoveryTime trr (ns) 50 ns
Maximum Average Rectifier Current IO (mA) 200 mA
Maximum Peak Forward Surge Current IFSM (A) 9 A
Forward Voltage Drop VF @ IF (mA) 1, 100 mA
Maximum ReverseCurrent IR (µA) 0.1 µA
TotalCapacitance CT (pF) 5 pF
V(BR)R (V) Min @IR=100?A 250
Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100? 50
Maximum Reverse Current IR @ VR (V) 200 V
VF(V) Max @ IF=1.0mA 0.715
VF(V) Max @ IF=10mA 0.855
IR(uA) Max @ VR=80V 100nA@250V
CT(pF) Max @ VR = 0V, f = 1MHz 5

Related Content

Packages

Applications

Technical Documents

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2544 2021-10-05 2022-01-05 Phenitec Wafer Manufacturing Site Change and Additional Wafer Source on Select Products
PCN-2315 2018-03-09 2018-06-09 Qualification of Alternative Wafer Sources for Select Products Due to Closure of Diodes FabTech (KFAB) Facility

FAQs

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