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SOD123F

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BAV21HWF

SURFACE MOUNT HIGH VOLTAGE DIODE

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Description

The BAV21HWF is a 250V, 100nA and 50ns switching diode that is optimized for high reverse breakdown voltage.

Feature(s)

  • High Reverse Breakdown Voltage
  • Flat Leadframe Design for Improved Thermal Transfer
  • High Conductance

Application(s)

  • Mobile phones
  • Portable and Consumer Electronics
  • LCD-TV
  • Smartphones
  • Motor Control
  • Power Supplies
  • Notebooks
  • Monitors

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Standard

AEC Qualified

Yes

Configuration

Single

Polarity

Anode, Cathode

Power Rating(mW)

375 mW

ESD Diodes (Y|N)

No

Peak RepetitiveReverse VoltageVRRM (V)

250 V

Reverse RecoveryTime trr (ns)

50 ns

Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100Ω

50

V(BR)R (V) Min @IR=100μA

250

Maximum Average Rectifier Current IO (mA)

200 mA

Maximum Peak Forward Surge Current IFSM (A)

9 A

Forward Voltage Drop VF @ IF (mA)

1, 100 mA

Maximum ReverseCurrent IR (µA)

0.1 µA

TotalCapacitance CT (pF)

5 pF

Maximum Reverse Current IR @ VR (V)

200 V

VF(V) Max @ IF=1.0mA

0.715

VF(V) Max @ IF=10mA

0.855

IR(uA) Max @ VR=80V

100nA@250V

CT(pF) Max @ VR = 0V, f = 1MHz

5

Related Content

Packages

Applications

Technical Documents

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2770 2025-10-30 2025-10-30 Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products
PCN-2544 2021-10-05 2022-01-05 Phenitec Wafer Manufacturing Site Change and Additional Wafer Source on Select Products