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BAV199WQ

DUAL SURFACE MOUNT LOW LEAKAGE DIODE

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Description

Dual surface mount low leakage diode.

Feature(s)

  • Surface Mount Package Ideally Suited for Automated Insertion
  • Ultra-Low Leakage Current
  • High-Precision Instrumentation

Application(s)

  • Mobile Phones
  • Portable and Consumer Electronics

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP) Automotive
AEC Qualified Yes
Configuration Dual, Series
Polarity Anode, Cathode
Power Rating(mW) 200 mW
ESD Diodes (Y|N) No
Peak RepetitiveReverse VoltageVRRM (V) 85 V
Reverse RecoveryTime trr (ns) 3000 ns
Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100Ω 3000
V(BR)R (V) Min @IR=100μA 85
Maximum Average Rectifier Current IO (mA) 160 mA
Maximum Peak Forward Surge Current IFSM (A) 4 A
Forward Voltage Drop VF @ IF (mA) 0.9, 1 mA
Maximum ReverseCurrent IR (µA) 0.005 µA
TotalCapacitance CT (pF) 2 pF
Maximum Reverse Current IR @ VR (V) 75 V
VF(V) Max @ IF=1.0mA 0.715
VF(V) Max @ IF=10mA 0.855
IR(uA) Max @ VR=80V 5nA@75V
CT(pF) Max @ VR = 0V, f = 1MHz 2

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

Purchase & Availablity

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2640 2023-09-12 2024-03-13 Device End of Life (EOL) - Automotive
PCN-2545 2021-10-05 2022-01-05 Phenitec Wafer Manufacturing Site Change and Additional Wafer Source on Select Automotive Products
PCN-2462 2020-05-08 2021-04-11 Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site (Automotive)