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1N5819HW1

1A SBR SUPER BARRIER RECTIFIER

Datasheet

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Description

The 1N5819HW1 is a single rectifier packaged in SOD123F. Offering low V_F and excellent high temperature stability, this device is ideal for use in general rectification applications such as Boost Diode and Blocking Diode.

Feature(s)

Low Forward Voltage (V_F) Minimizes Conduction Losses and Improving Efficiency
Reduced High Temperature Reverse Leakage
Increased Reliability Against Thermal Runaway Failure in High Temperature Operation
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free. “Green” Device

Application(s)

Boost Diode
Blocking Diode
Lighting
Backlighting
Smart Lighting

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive supports PPAP)	Standard
Configuration	Single
MaximumAverageRectifiedCurrent I_O(A)	1 A
@ TerminalTemperature TT (ºC)	N/A ºC
Peak RepetitiveReverse VoltageV_RRM(V)	40 V
Peak ForwardSurge CurrentI_FSM(A)	30 A
Forward VoltageDrop V_F(V)	0.51 V
@ I_F(A)	1 A
Maximum ReverseCurrent I_R(µA)	500 µA
@ V_R(V)	40 V
Reverse RecoveryTime trr (ns)	15 ns
TotalCapacitance C_T(pF)	30 pF

Technical Documents

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2477	2020-08-17	2021-05-09	Additional Wafer Source (GFAB), and Transfer Assembly and Test Site to DiYi