Diodes Incorporated
U DFN2020 6 Type F

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

U-DFN2020-6-Type-F.png
Back to MOSFET Master Table

DMTH4008LFDFWQ

40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

Application(s)

  • Power Management Functions
  • DC-DC Converters
  • Backlighting

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
  • Low RDS(ON) – Ensures On State Losses Are Minimized
  • 0.6mm Profile – Ideal for Low Profile Applications
  • PCB Footprint of 4mm2
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability
  • PPAP Capable (Note 4)

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 40 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 11.6 A
PD @TA = +25°C (W) 2.35 W
RDS(ON)Max@ VGS(10V)(mΩ) 11.5 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 18 mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 6.8 nC
QG Typ @ |VGS| = 10V (nC) 14.2 nC
CISS Typ (pF) 1030 pF
CISS Condition @|VDS| (V) 20 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC