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ZXTN2038F

NPN, 60V, 1A, SOT23

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Description

This transistor combines high gain, high current operation and low saturation voltage making it ideal for power MOSFET gate driving and low loss power switching.

Application(s)

  • Power MOSFET gate driving
  • Low loss power switching
  • Product Specifications

    Product Parameters

    Qualified to AEC-Q10x Yes
    Compliance (Only Automotive supports PPAP) On Request*
    Product Type NPN
    VCEO, VCES (V) 60 V
    IC (A) 1 A
    ICM (A) 2 A
    PD (W) 0.35 W
    hFE (min) 100 Min
    hFE(@ IC) 0.5 A
    hFE(Min 2) 80
    hFE(@ IC2) 1 A
    VCE (SAT)Max (mV) 200 mV
    VCE (SAT) (@ IC/IB) (A/m A) 0.5/10
    VCE (SAT)(Max.2) 250 mV
    VCE (SAT) (@ IC/IB2) (A/mA) 0.5/50
    fT (MHz) 150 MHz
    RCE(SAT) N/A mΩ

    Related Content

    Packages

    Technical Documents

    SPICE Model

    Calculators

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC

    Orderable Part Number Buy from Distributor / Contact Sales Request Samples
    ZXTN2038F

    ZXTN2038F

    Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
    Farnell, An Avnet Company 1268 9/17/2021 England Buy Now
    Farnell, An Avnet Company 1268 9/17/2021 England Buy Now
    Request Sample
    ZXTN2038FTA

    ZXTN2038FTA

    Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
    Mouser Electronics Inc. 4612 9/17/2021 South America, North America, Asia, Europe, Middle East Buy Now
    RS Components 2800 9/17/2021 England Buy Now
    Digi-Key Electronics 8941 9/16/2021 Europe, Asia, North America Buy Now
    Request Sample

    PCNs

    Product Change Notices

    PCN # Issue Date Implementation Date Subject
    PCN-2330 2018-03-29 2018-07-29 Qualification of Additional A/T site and Conversion to Palladium Coated Copper Bond Wire on Select Discrete Products
    PCN-2252 2017-02-24 2017-05-24 Add Additional Plating Process Site at Diodes Technology (Chengdu) Company Limited (CAT) for Select Parts