Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. TO252 (DPAK)
N-Channel Enhancement Mode MOSFET
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This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Compliance (Only Automotive Supports PPAP) |
Standard |
|---|---|
AEC Qualified |
Yes |
Polarity |
N |
ESD Diodes (Y|N) |
No |
|VDS| (V) |
60 V |
|VGS| (±V) |
20 ±V |
|IDS| @TA = +25°C (A) |
5.36 A |
PD @TA = +25°C (W) |
2.12 W |
RDS(ON)Max@ VGS(10V) (mΩ) |
80 mΩ |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
150 mΩ |
|VGS(TH)| Max (V) |
3 V |
QG Typ @ |VGS| = 4.5V (nC) |
3.8 nC |
QG Typ @ |VGS| = 10V (nC) |
5.8 nC |
CISS Typ (pF) |
459 @ 40V pF |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2770 | 2025-10-30 | 2025-10-30 | Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products |
| PCN-2761 | 2025-10-15 | 2025-10-15 | Add Ejector Pin Mark on TO-252 Packaged Products Manufactured at Diodes Internal Assembly and Test Site (SAT) |
