Diodes Incorporated — Analog and discrete power solutions
TO252 DPAK

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. TO252 (DPAK)

TO252 DPAK

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. TO252 (DPAK)

TO252 DPAK

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. TO252 (DPAK)

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ZXMN6A08K

N-Channel Enhancement Mode MOSFET

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Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • Backlighting
  • DC-DC Converters
  • Power management functions

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP) Standard
AEC Qualified Yes
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 5.36 A
PD @TA = +25°C (W) 2.12 W
RDS(ON)Max@ VGS(10V)  (mΩ) 80 mΩ
RDS(ON)Max@ VGS(4.5V)  (mΩ) 150 mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 3.8 nC
QG Typ @ |VGS| = 10V (nC) 5.8 nC
CISS Typ (pF) 459 @ 40V pF

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

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