Diodes Incorporated
SO 8

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ZXM66P02N8 (Not Recommended for new design)

NRND = Not Recommended for New Design


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This high density MOSFET utilizes a unique structure that combines the benefits of a low on-resistance with fast switching speed. This makes it ideal for high efficiency, low voltage power management applications. Compared to trenchFET technology, this MOSFET structure has an intrinsically higher pulse current handling capability in linear mode.


  • Inrush protection circuits
  • DC-DC Converters
  • Power management functions
  • Disconnect switches
  • Motor control
  • Product Specifications

    Product Parameters

    Compliance (Only Automotive supports PPAP) No
    CISS Condition @|VDS| (V) N/A
    CISS Typ (pF) 2100
    ESD Diodes (Y|N) No
    |IDS| @TA = +25°C (A) 8
    PD @TA = +25°C (W) 1.56
    Polarity P
    QG Typ @ |VGS| = 10V (nC) N/A
    QG Typ @ |VGS| = 4.5V (nC) 43.3
    AEC Qualified No
    RDS(ON)Max@ VGS(1.8V)(mΩ) N/A
    RDS(ON)Max@ VGS(10V)(mΩ) N/A
    RDS(ON)Max@ VGS(2.5V)(mΩ) 45
    RDS(ON)Max@ VGS(4.5V)(mΩ) 25
    |VDS| (V) 20
    |VGS| (±V) N/A
    |VGS(TH)| Max (V) N/A
    |VGS(TH)| Min (V) 0.7

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    RoHS CofC