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ZXM66P02N8 (NRND)

NRND = Not Recommended for New Design

P-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This high density MOSFET utilizes a unique structure that combines the benefits of a low on-resistance with fast switching speed. This makes it ideal for high efficiency, low voltage power management applications. Compared to trenchFET technology, this MOSFET structure has an intrinsically higher pulse current handling capability in linear mode.

Application(s)

Inrush protection circuits

DC-DC Converters

Power management functions

Disconnect switches

Motor control

Specifications & Technical Documents

Product Parameters

C_ISS Condition @\|V_DS\| (V)	N/A
C_ISS Typ (pF)	2100
ESD Diodes (Y\|N)	No
Polarity	P
Q_G Typ @ \|V_GS\| = 10V (nC)	N/A
Q_G Typ @ \|V_GS\| = 4.5V (nC)	43.3
AEC Qualified	No
R_DS(ON)Max@ V_GS(1.8V) (mΩ)	N/A
R_DS(ON)Max@ V_GS(10V) (mΩ)	N/A
R_DS(ON)Max@ V_GS(2.5V) (mΩ)	45
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	25
\|V_DS\| (V)	20
\|V_GS\| (±V)	N/A
\|V_GS(TH)\| Max (V)	N/A
\|V_GS(TH)\| Min (V)	0.7