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T16M35T800HC(LS)

Triacs Silicon Bidirectional Thyristors

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Feature(s)

  • Passivated die for reliability and uniformity
  • Three-quadrant triggering
  • Blocking voltage to 800V
  • Low level triggering and holding characteristics
  • Isolated mounting base package
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP) Standard
Junction Temperature (°C) 150
AEC Qualified No
Configuration Bi-Directional
Type TRIAC
Peak Repetitive Off-State VoltageVDRM / RRM (V) 800 V
On-State RMS Current(RMS)IT(RMS) (A) 16 A
Peak On-State Voltage MaxVTM Max(V) 1.5 V
Gate Trigger Current MaxIGT MAX (mA) 35 mA
Peak Repetitive Forward Current MaxIDRM Max (uA) 5 uA
Peak Non-Repetitive Surge CurrentITRM / ITSM (A) 150 A
Holding Current MaxIH Max (mA) 50 mA

Related Content

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Technical Documents

Recommended Soldering Techniques

TN1.pdf

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