Diodes Incorporated
Back to Transistor (BJT) Master Table

DXTP3C100PD

Dual PNP, 100V, 3A, PowerDI5060-8

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Feature(s)

  • BVCEO > -100V
  • IC = -3A Continuous Collector Current
  • ICM = -8A Peak Pulse Current
  • RCE(SAT) = 110mΩ (Typ)
  • Rated to +175°C – Ideal for High Ambient Temperature
    Environments
  • Complementary Part DXTN3C100PD
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • For automotive applications requiring specific change
    control (i.e. parts qualified to AEC-Q100/101/200, PPAP
    capable, and manufactured in IATF 16949 certified facilities),
    please contact us or your local Diodes representative.
    https://www.diodes.com/quality/product-definitions/

Application(s)

  • Power Management
  • Load Switches

Product Specifications

Product Parameters

Category Low Saturation Transistor
Compliance(Only Automotive supports PPAP) Standard
Polarity PNP + PNP
VCEO, VCES (V) 100
IC (A) 3
ICM (A) 8
PD (W) 1.76
hFE (Min) 170
hFE (@ IC) (A) 0.5
hFE(Min 2) 45
hFE (@ IC2) (A) 2
VCE(sat) Max (mV) 110
VCE(SAT) (@ IC/IB) (A/mA) 0.5/50
VCE(sat) (Max.2) (mV) 360
VCE(sat) (@ IC/IB2) (A/mA) 2/200
fT (MHz) 125
RCE(sat) (mΩ) 180

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC