Diodes Incorporated — Analog and discrete power solutions
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DMTH8030LPDW

80V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI5060-8

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Description

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
  • Low Input Capacitance
  • Fast Switching Speed
  • Wettable Flank for Improved Optical Inspection
  • Additional Tin-Plated on Sidewall Pads for Optical Solder Inspection
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • An Automotive-Compliant Part is Available Under Separate Datasheet (DMTH8030LPDWQ)

Application(s)

  • DC-DC converters
  • Motors

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+N
ESD Diodes (Y|N) No
|VDS| (V) 80 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 28.5
PD @TA = +25°C (W) 3.1
PD @TC = +25°C (W) 41
RDS(ON)Max@ VGS(10V)(mΩ) 26 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 45 mΩ
|VGS(TH)| Min (V) 1.3 V
|VGS(TH)| Max (V) 2.5 V
QG Typ @ |VGS| = 4.5V (nC) 5.4 nC
QG Typ @ |VGS| = 10V (nC) 10.4 nC
CISS Typ (pF) 631 pF
CISS Condition @|VDS| (V) 40 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC