Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI5060-8
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI5060-8
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI5060-8
60V +175°C N-Channel Enhancement Mode MOSFET
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This new generation N-channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in power management and load switch.
Compliance (Only Automotive Supports PPAP) |
Standard |
|---|---|
AEC Qualified |
No |
Polarity |
N |
ESD Diodes (Y|N) |
No |
|VDS| (V) |
60 V |
|VGS| (±V) |
20 ±V |
|IDS| @TC = +25°C (A) |
225 A |
PD @TA = +25°C (W) |
3.2 W |
PD @TC = +25°C (W) |
167 W |
RDS(ON)Max@ VGS(10V) (mΩ) |
1.5 mΩ |
|VGS(TH)| Max (V) |
4 V |
QG Typ @ |VGS| = 10V (nC) |
130.6 nC |
CISS Typ (pF) |
8306 pF |
CISS Condition @|VDS| (V) |
30 V |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2628 | 2023-05-11 | 2023-08-11 | Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source for Select Discrete Products |
